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Optical study of porous silicon buried waveguides fabricated from p-type silicon |
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| Authors: | J. Charrier C. Lupi L. Haji C. Boisrobert |
| Affiliation: | 1. MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical and Power Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2. George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA |
| Abstract: | The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p+. |
| Keywords: | Optical waveguide Oxidised porous silicon Optical loss Near field pattern |
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