Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na0.5Bi0.5)TiO3–xBiAlO3 Lead‐Free Piezoelectric Thin Films |
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| Authors: | Yunqiang Yao Xiaoqing Wu Peng Shi Zuo‐Guang Ye |
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| Affiliation: | 1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, China;2. Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC, Canada |
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| Abstract: | Lead‐free sodium bismuth titanate–aluminate bismuth 0.97(Na0.5Bi0.5)TiO3–0.03BiAlO3] solid‐solution films deposited on (100) Pt/TiO2/SiO2/Si substrates by a sol–gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2Pr of 38 μC/cm2 and a leakage current density of 10?7–10?6 A/cm2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT‐BA films a viable lead‐free alternative to the lead‐based materials in such as biosensors and ultrasonic transducers. |
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