Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x‐Carbon Core–Shell Particles |
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| Authors: | Qingbo Wen Yao Feng Zhaoju Yu Dong‐Liang Peng Norbert Nicoloso Emanuel Ionescu Ralf Riedel |
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| Affiliation: | 1. College of Materials, Xiamen University, Xiamen, 361005, China;2. Institut für Materialwissenschaft, Technische Universit?t Darmstadt, Darmstadt, Germany;3. Ministry of Education, Key Laboratory of High Performance Ceramic Fibers (Xiamen University), Xiamen, China;4. Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen, China |
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| Abstract: | The dielectric properties of high‐temperature stable single‐source precursor‐derived SiC/HfCxN1?x/C ceramic nanocomposites are determined by microwave absorption in the X‐band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1?x/C‐1700°C and SiC/15HfCxN1?x/C‐1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1?x, respectively, show enhanced microwave absorption capability superior to hafnium‐free SiC/C‐1700°C. The minimum reflection loss of SiC/5HfCxN1?x/C‐1700°C and SiC/15HfCxN1?x/C‐1700°C are ?47 and ?32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1?x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1?x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1?x/C‐1700°C and SiC/15HfCxN1?x/C‐1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment. |
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| Keywords: | Core– shell structures microwaves nanocomposites silicon carbide dielectric materials/properties |
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