Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors |
| |
Authors: | DH Tassis AT Hatzopoulos N Arpatzanis CA Dimitriadis G Kamarinos |
| |
Affiliation: | aDepartment of Physics, University of Thessaloniki, 54124 Thessaloniki, Greece;bIMEP, ENSERG, 38016 Grenoble Cedex 1, France |
| |
Abstract: | The effects of hot-carriers under dynamic stress on the transfer characteristics and the noise performance of n-channel polysilicon thin-film transistors are analysed. The observed decrease in the on-state current is directly related to the mobility of a damaged region extended over a length of about 0.53 μm beside the drain, which is evaluated through analysis of the transfer characteristics at low drain voltage. The mobility degradation in the damaged region is due to the formation of traps located near the polysilicon/gate oxide interface as evidenced by the 1/f noise measurements. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|