Influence of segregation in quantum well structures |
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Authors: | R Murray C Bryan H Yu S Lycett |
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Affiliation: | (1) Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, SW7 2BZ London, UK |
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Abstract: | The potential associated with quantum well (QW) structures is usually assumed to be a step function; this implies a compositional abruptness at each interface. But abrupt interfaces do not occur in practice, especially if one of the atoms segregates during growth. This leads to asymmetries in the QW potentials which could radically affect device performance. |
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