首页 | 本学科首页   官方微博 | 高级检索  
     

参数浮动下低功耗多米诺门的蒙特卡罗分析
引用本文:汪金辉,吴武臣,宫娜,侯立刚,彭晓宏,高大明. 参数浮动下低功耗多米诺门的蒙特卡罗分析[J]. 半导体学报, 2009, 30(12): 125010-5
作者姓名:汪金辉  吴武臣  宫娜  侯立刚  彭晓宏  高大明
基金项目:北京工业大学博士研究生创新计划项目(批准号:bcx-2009-015)
摘    要:Using the multiple-parameter Monte Carlo method, the effectiveness of the dual threshold voltage technique (DTV) in low power domino logic design is analyzed. Simulation results indicate that under significant temperature and process fluctuations, DTV is still highly effective in reducing the total leakage and active power consumption for domino gates with speed loss. Also, regarding power and delay characteristics, different structure domino gates with DTV have different robustness against temperature and process fluctuation.

关 键 词:多米诺  低功耗  蒙特卡罗分析  大波动  蒙特卡罗方法  数字电视  逻辑设计  阈值电压
收稿时间:2009-06-05
修稿时间:2009-07-09

Monte Carlo analysis of a low power domino gate under parameter fluctuation
Wang Jinhui,Wu Wuchen,Gong N,Hou Ligang,Peng Xiaohong and Gao Daming. Monte Carlo analysis of a low power domino gate under parameter fluctuation[J]. Chinese Journal of Semiconductors, 2009, 30(12): 125010-5
Authors:Wang Jinhui  Wu Wuchen  Gong N  Hou Ligang  Peng Xiaohong  Gao Daming
Affiliation:[1]VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China; [2]Department of Computer Science and Engineering, State University of New York at Buffalo, Buffalo 14260, NY, USA
Abstract:Using the multiple-parameter Monte Carlo method, the effectiveness of the dual threshold voltage technique (DTV) in low power domino logic design is analyzed. Simulation results indicate that under significant temperature and process fluctuations, DTV is still highly effective in reducing the total leakage and active power consumption for domino gates with speed loss. Also, regarding power and delay characteristics, different structure domino gates with DTV have different robustness against temperature and process fluctuation.
Keywords:domino gate  temperature and process fluctuation  effectiveness
本文献已被 维普 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号