Collector-assisted operation of micromachined field-emitter triodes |
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Authors: | Busta HH Pogemiller JE Zimmerman BJ |
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Affiliation: | Amoco Technol. Co., Naperville, IL; |
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Abstract: | The field at the tip of a field emitter triode can be expressed by E=βVg+γV c, where Vg and Vc the gate and collector voltages, respectively. For small gate diameters and tips below or in the plane of the gate and/or large tip-to-collector distances, γVc<<βV g. The-device is operated in the gate-induced field emission mode and the corresponding I-Vc curves are pentode-like. By increasing the gate diameter and/or recessing the gates from the tips, collector-assisted operation can be achieved at reasonable collector voltages. Results are presented for two devices with gate diameters of 3.6 and 2.0 μm. By obtaining γ at different emitter-to-collector distances, I-Vc and transconductance gm-Vg curves are calculated and compared with experimental results. It is shown that as a consequence of collector-assisted operation, the transconductance of a device can be increased significantly |
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