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氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响
引用本文:顾四朋,侯立松,刘波,陈静.氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响[J].中国激光,2003,30(12):1111-1115.
作者姓名:顾四朋  侯立松  刘波  陈静
作者单位:1. 中国科学院上海光学精密机械研究所,上海,201800
2. 中国科学院上海技术物理所红外物理国家实验室,上海,200083
基金项目:国家自然科学基金 (5 9832 0 6 0 )重点资助项目
摘    要:研究了氧掺杂Ge Sb Te磁控溅射相变薄膜在 4 0 0~ 80 0nm区域的光学常数 (n ,k) ,发现不同氧成分薄膜的光学性质有较大差别 ,经过热处理后薄膜的光学性质也发生了较大变化。由热处理前后薄膜的X射线衍射 (XRD)发现 ,经过退火处理后薄膜发生了从非晶态到晶态的相变。由薄膜内应力变化和薄膜的结构变化解释了薄膜光学性质的变化

关 键 词:薄膜物理学  Ge-Sb-Te薄膜  氧杂质  光学常数  X射线衍射
收稿时间:2001/10/12

Optical and Structural Properties of Oxygen-doped and Annealed Ge-Sb-Te Thin Films
GU Si-peng ,HOU Li-song ,LIU Bo ,CHEN Jing.Optical and Structural Properties of Oxygen-doped and Annealed Ge-Sb-Te Thin Films[J].Chinese Journal of Lasers,2003,30(12):1111-1115.
Authors:GU Si-peng  HOU Li-song  LIU Bo  CHEN Jing
Affiliation:GU Si-peng 1,HOU Li-song 1,LIU Bo 1,CHEN Jing 2 1Shanghai Institute of Optics and Fine Mechanics,The Chinese Academy of Sciences,Shanghai 201800,China 2National Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,The Chinese Academy of Sciences,Shanghai 200083,China
Abstract:Optical properties of oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method in the region of 400~800 nm were studied, including refractive index, extinction coefficient. The results show that optical constants of the Ge-Sb-Te-O films change with oxygen content and heat-treatment. XRD spectra of the films with different oxygen content in the as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. The effect of the strain field induced by oxygen-doping on optical properties is discussed.
Keywords:thin films physics  Ge-Sb-Te films  oxygen-doping  optical constants  X-ray diffraction
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