| 关于SOI/SDB薄膜全耗尽隐埋N沟MOSFET的新型解析模型 |
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| 引用本文： | 周天舒 黄庆安. 关于SOI/SDB薄膜全耗尽隐埋N沟MOSFET的新型解析模型[J]. 固体电子学研究与进展, 1993, 13(2): 117-122 |
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| 作者姓名： | 周天舒 黄庆安 |
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| 作者单位： | 东南大学微电子中心，东南大学微电子中心，东南大学微电子中心 南京 210018，南京 210018，南京 210018 |
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| 摘 要： | 对SOI/SDB薄膜全耗尽隐埋N沟MOSFET(FDBC NMOSFET)的器件结构及导电机理进行了深入研究,建立了明确的物理解析模型,推导出各种状态下器件工作电流的解析表达式。并将解析模型的计算结果与实验数据进行了比较和讨论。
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| 关 键 词： | SOI/SDB 全耗尽隐埋N沟MOSFET(FD BC NMOSFET) |
A Novel Analytical Model for Thin Film Fully Depleted Buried N-Channel SOI/SDB MOSFET (SOI/SDB FD BC NMOSFET) |
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| Zhou Tianshu,Huang Qingan,Tong Qinyi. A Novel Analytical Model for Thin Film Fully Depleted Buried N-Channel SOI/SDB MOSFET (SOI/SDB FD BC NMOSFET)[J]. Research & Progress of Solid State Electronics, 1993, 13(2): 117-122 |
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| Authors: | Zhou Tianshu Huang Qingan Tong Qinyi |
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| Abstract: | In this paper, conduction mechanism in thin-film fully depleted buried N-channel SOI/SDB MOSFET is studied in detail, the definite physical model is developed and analytical expressions under various conditions have been provided. Finally, the analytical results based on this model are compared with the experimental results,and some discussions are made. |
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| Keywords: | SOI/SDB Fully Depleted Buried N-Channel MOSFET |
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