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13.3‐inch 8k4k 664‐ppi foldable OLED display using crystalline oxide semiconductor FETs |
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| Authors: | Kei Takahashi Takehisa Sato Roh Yamamoto Hideaki Shishido Toshiyuki Isa Shingo Eguchi Hiroyuki Miyake Yoshiharu Hirakata Shunpei Yamazaki Rai Sato Hironori Matsumoto Naomi Yazaki |
| Affiliation: | 1. Semiconductor Energy Laboratory Co., Ltd., Kanagawa, Japan;2. Advanced Film Device Inc., Tochigi, Japan |
| Abstract: | A prototype 13.3‐inch 8k4k 664‐ppi high‐resolution foldable organic light emitting diode display is constructed. C‐axis aligned a‐b‐plane‐anchored crystal In–Ga–Zn oxide field effect transistors designed using a 1.5‐µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current. |
| Keywords: | oxide semiconductor CAAC‐IGZO OLED foldable flexible high resolution 8k4k external correction circuit |