Influence of the atmosphere on organic–organic interfacial layers and deterioration in organic light‐emitting diodes |
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| Authors: | Hirofumi Nakamura Seong‐Hee Noh Miki Kuribayashi Chihaya Adachi |
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| Affiliation: | 1. RDS Platform, Device & Material R&D Group, Planning Department, SONY Corporation, Atsugi, Kanagawa, Japan;2. Department of Chemistry and Biochemistry, Kyushu University, Nishi, Fukuoka, Japan;3. Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, Nishi, Fukuoka, Japan;4. RDS Platform, Device & Material R&D Group, Semiconductor Device Development Division, Device Technology Department, SONY Corporation, Atsugi, Kanagawa, Japan;5. RDS Platform, Device & Material R&D Group, Advanced Materials Laboratories, Materials Analysis Center, Chemical Analysis Gp., SONY Corporation, Atsugi, Kanagawa, Japan;6. International Institute for Carbon Neutral Energy Research (WPI‐I2CNTR), Kyushu University, Nishi, Fukuoka, Japan |
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| Abstract: | The influence of organic–organic interfacial contaminants and deterioration in organic light‐emitting diodes (OLEDs) was investigated. There was deterioration of the device characteristics when atmospheric contamination was introduced to the emission site. We simultaneously observed a decrease of the maximum capacitance, Cmax, of the OLEDs, implying that there was charge accumulation at the interface. Our study demonstrates that maintaining the interface adjacent to emission site free from contaminants is crucial to protect the device from deterioration. |
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| Keywords: | atmosphere deterioration lifetime Cmax TOF‐SIMS OLED |
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