Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors |
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Authors: | Ken Hoshino John Wager |
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Affiliation: | Materials and Device Applications Laboratory, Sharp Laboratories of America, Camas, WA, USA |
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Abstract: | Electrical performance stability of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) is evaluated under negative bias illumination stress (NBIS). A bottom‐gate IGZO TFT whose top surface is passivated with zinc tin silicon oxide (ZTSO) exhibits a dramatic improvement in NBIS stability compared with that of an unpassivated, bottom‐gate IGZO TFT. Oxygen chemisorption/desorption at the channel layer top surface is proposed to explain why an unpassivated TFT exhibits significantly more NBIS than a passivated TFT. |
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Keywords: | IGZO NBIS |
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