A novel empirical study of the two‐dimensional non‐linear drain‐current behaviour in sub‐micrometre MOS transistors

This paper presents a simple, quasi‐static, non‐linear (saturated mode) NMOS drain‐current model for Volterra‐series analysis. The model is based on a linear transconductance, a linear drain‐source conductance and a purely non‐linear drain‐source current generator. The drain‐current dependency on both drain‐source and gate‐source voltages is included. Model parameters are then extracted from direct numerical differentiation of DC I/V measurements performed on a 160 × 0.25 µm NMOS device. This paper presents the Volterra analysis of this model, including algebraic expressions for intercept points and output spectrum. The model has been verified by comparing measured two‐tone iIP₂ and iIP₃ with the corresponding model predictions over a wide range of bias points. The correspondence between the modelled and measured response is good. Copyright © 2005 John Wiley & Sons, Ltd.