| 碲锌镉晶片退火的显微Raman光谱分析 |
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| 引用本文： | 黄晖,潘顺臣.碲锌镉晶片退火的显微Raman光谱分析[J].红外技术,2004,26(5):37-39,45. |
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| 作者姓名： | 黄晖 潘顺臣 |
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| 作者单位： | 昆明物理研究所,云南,昆明,650223;昆明物理研究所,云南,昆明,650223 |
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| 基金项目： | 云南省自然科学基金重点项目(批准号:2003E0012Z)资助的课题 |
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| 摘 要： | 测量了4块不同退火条件处理碲锌镉晶片的显微Raman光谱，观察到了与碲锌镉材料及材料中Te沉积晶格振动相对应的Raman散射峰，发现了位于327cm^-1／332cm^-1的新峰。通过对碲锌镉晶片进行退火处理，有效的消除了Te沉积，比较碲锌镉晶片退火前后的显微Raman光谱，指出327cm^-1／332cm^-1散射峰只可能由来源于类CdTe或类ZnTe的二级声子散射引起，与碲锌镉材料中的Te沉积无关。
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| 关 键 词： | 碲锌镉晶片 退火处理 显微Raman光谱 Te沉积 |
| 文章编号： | 1001-8891(2004)05-0037-39 |
Study on the Annealing Cadmium Zinc Telluride Substrate Wafers by Micro-Raman Spectrum |
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| HUANG Hui,PAN Shun-chen.Study on the Annealing Cadmium Zinc Telluride Substrate Wafers by Micro-Raman Spectrum[J].Infrared Technology,2004,26(5):37-39,45. |
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| Authors: | HUANG Hui PAN Shun-chen |
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| Abstract: | The four cadmium zinc telluride crystal wafers of having different annealing condition were measured by means of Raman microscopy. Besides the basic phonon vibrations from cadmium zinc telluride crystal and tellurium precipitates were recognized, one new Raman peak at 327cm-1/332cm-1was observed. Through the annealing of cadmium zinc telluride crystal wafers, the tellurium precipitates were eliminated. The Raman peak at 327cm-1/332cm- 1 was proposed to belong to the CdTe-like or ZnTe-like two-phonon vibrational mode by comparing the micro-Raman spectra of different annealing cadmium zinc telluride crystal wafers. The Raman peak at 327cm-1/332cm-1 is not correlative with the tellurium precipitates in the cadmium zinc telluride crystal. |
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| Keywords: | cadmium zinc telluride crystal wafer annealing treatment micro-Raman spectrum tellurium precipitate |
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