| 磁控溅射工艺参数对钛钨合金膜电阻温度特性的影响 |
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| 引用本文： | 马卫红,蔡长龙. 磁控溅射工艺参数对钛钨合金膜电阻温度特性的影响[J]. 表面技术, 2011, 0(5): 85-87 |
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| 作者姓名： | 马卫红 蔡长龙 |
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| 作者单位： | 西安工业大学光电工程学院,西安,710032;西安工业大学光电工程学院,西安,710032 |
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| 摘 要： | 采用直流磁控溅射方法在载玻片上制备钛钨合金热敏感薄膜,测试了所制备的钛钨合金热敏薄膜在不同温度下的方块电阻,并根据测试曲线计算薄膜的电阻温度系数(TCR)。研究了工作气压、氩气流量以及溅射电流对钛钨合金膜TCR的影响,获得了最佳沉积工艺参数,即:溅射电流0.32A,工作气压0.8Pa,氩气流量60cm3/min。在此参数下制备的钛钨合金膜TCR为0.2%/K。测试结果也表明钛钨合金膜的时间稳定性好。
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| 关 键 词： | 钛钨合金膜 磁控溅射 电阻温度系数 工艺参数 |
Influence of Magnetron Sputtering Technique Parameters on Resistance-temperature Characteristic of Ti-W Alloy Films |
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| MA Wei-hong,CAI Chang-long. Influence of Magnetron Sputtering Technique Parameters on Resistance-temperature Characteristic of Ti-W Alloy Films[J]. Surface Technology, 2011, 0(5): 85-87 |
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| Authors: | MA Wei-hong CAI Chang-long |
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| Affiliation: | MA Wei-hong,CAI Chang-long(School of Photoelectric Engineering,Xi'an Technological University,Xi'an 710032,China) |
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| Abstract: | Ti-W alloy films were deposited by DC magnetron sputtering on ordinary glass,and the square resistance of Ti-W alloy films under the different temperature was measured,and the temperature coefficient of resistance(TCR) was calculated according to the measurement curve.The influence of working pressure,Ar flow rate and sputtering current on the TCR of Ti-W alloy films was researched.After studying,the best technique parameter was obtained,that is,sputtering current 0.32 A,working pressure 0.8 Pa,and Ar flow ... |
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| Keywords: | Ti-W alloy films magnetron sputtering temperature coefficient of resistance process parameters |
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