Etching Effect on CMP of Different GaN Layers |
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| Authors: | Chen Xiufang Siche Dietmar Rost Hans-Joachim Schulz Tobias Albrecht Martin Xu Xiangang State Key Laboratory of Crystal Materials Sh ong University Jinan China |
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| Affiliation: | Chen Xiufang1,Siche Dietmar2,Rost Hans-Joachim2,Schulz Tobias2,Albrecht Martin2,Xu Xiangang1 1 State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China,2 Institute of Crystal Growth,Max-Born-Str. 2,12489 Berlin,Germany |
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| Abstract: | Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by physical vapor transport. It was found that CMP could reveal the dislocations in GaN surfaces due to a selective etching component. After the optimization of CMP condition, the surface finish improved and the subsurface damage was almost completely removed, demonstrated by atomic force microsco... |
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| Keywords: | surface etch pits CMP GaN |
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