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Behaviour of a low-noise microwave f.e.t. at low temperature |
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| Authors: | Loriou B Bellec M Le Rouzic M |
| Affiliation: | Centre National d'études des Télécommunications, Centre des Recherches, Lannion, France; |
| Abstract: | The values of gain and noise figure at 1000 MHz were measured against temperature (from 300 to 77K) for a GaAs f.e.t., in common-source configuration. An important decrease in noise figure from 3.2 to 1.5 dB with a 2 dB increase in gain was observed. |
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