Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature |
| |
Authors: | Recht F McCarthy L Rajan S Chakraborty A Poblenz C Corrion A Speck JS Mishra UK |
| |
Affiliation: | Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA; |
| |
Abstract: | This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1/spl times/10/sup 16/ cm/sup -2/ and were activated at /spl sim/1260/spl deg/C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 /spl Omega//spl middot/mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V. |
| |
Keywords: | |
|
|