Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm^?3 which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm^?3, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 µm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.