| 3.5GHz 65W硅脉冲大功率晶体管研制 |
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| 引用本文： | 潘宏菽,朱石平,李明月,吕仲志,张颖秋,周名辉,崔现锋.3.5GHz 65W硅脉冲大功率晶体管研制[J].半导体技术,2001,26(11):49-52. |
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| 作者姓名： | 潘宏菽 朱石平 李明月 吕仲志 张颖秋 周名辉 崔现锋 |
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| 作者单位： | 河北半导体研究所, |
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| 摘 要： | 介绍了采用梳状发射极自对准工艺研制的硅微波脉冲大功率晶体管的实验结果。在3．5GHz频率下，该晶体管脉冲输出功率65W，功率增益7dB，集电极效率35％（脉冲宽度100微秒，占空比5％）。
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| 关 键 词： | 功率晶体管 硅 脉冲放大器 |
| 文章编号： | 1003-353(2001)11-0049-04 |
| 修稿时间： | 2001年4月10日 |
Processing technology for 3.5GHz 65W silicon high power pulsed transistor |
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| PAN Hong-shu,ZHU Shi-ping,LI Ming-yue,L Zhong-zhi,ZHANG Ying-qiu,ZHOU Ming-hui,CUI Xian-feng.Processing technology for 3.5GHz 65W silicon high power pulsed transistor[J].Semiconductor Technology,2001,26(11):49-52. |
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| Authors: | PAN Hong-shu ZHU Shi-ping LI Ming-yue L Zhong-zhi ZHANG Ying-qiu ZHOU Ming-hui CUI Xian-feng |
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| Abstract: | The experimental results of a silicon microwave pulsed high power transistor with self- aligned interdigiatated emitter are introduced. The transistor we have developed produces 65 Watts of output power with 7dB power gain and 35% collector efficiency under pulsed operation (pulse width 100 u s at 5% duty) at 3.5GHz. |
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| Keywords: | power transistor microwave pulse Si |
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