X-ray channeling technique using anomalous transmission and its application to si micro-defects induced by heat treatment

X-ray channeling (XRC) technique using anomalous transmission is newly developed as a method of evaluating micro-defects in bulk single crystals. It is ascertained that there is a definite correlation between the decrease of the (hkl) anomalously transmitted intensity and the characteristic of the lattice defect. The present XRC technique has been tentatively applied to micro-defects (M.D.’s) induced in Si during heat treatment. As a result, it is conjectured that dislocation loops and stacking faults are preferentially induced during N₂ atmosphere annealing at 1040‡C and wet O₂ atmosphere annealing at 1100‡C, respectively, though precipitates are also generated during both annealings.