| 击穿电荷（QBD：监测E^2PROM中超薄隧道氧化层的一种方法 |
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| 引用本文： | 赵文彬,肖明.击穿电荷（QBD：监测E^2PROM中超薄隧道氧化层的一种方法[J].电子器件,1999,22(1):22-27. |
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| 作者姓名： | 赵文彬 肖明 |
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| 作者单位： | 东南大学无锡分校 |
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| 摘 要： | 本文采用恒定电流应力的ＱＢＤ测试来描述超薄隧道氧化层的质量。Ｅ＾２ＰＲＯＭ失效的内在机理是由于隧道氧化层中的电荷陷阱。并同时给同了ＱＢＤ的测试方法。测试表明，使用８ｎｍ隧道氧化层，ＱＢＤ〉５Ｃ／ｃｍ＾２时可获得高质量的Ｅ＾２ＰＲＯＭ电路，擦／写次数可超过１００万次。
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| 关 键 词： | 存贮器 隧道氧化层 可擦写 E^2PROM QBD测试 |
Charge to breakdown ( Q BD ):a Method to Monitor the Ultrathin Tunnel Oxide in E 2PROM |
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| Zhao Wenbin\ \ Xiao ming\ \ Xu zheng\ \ Zhang Ankang.Charge to breakdown ( Q BD ):a Method to Monitor the Ultrathin Tunnel Oxide in E 2PROM[J].Journal of Electron Devices,1999,22(1):22-27. |
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| Authors: | Zhao Wenbin\ \ Xiao ming\ \ Xu zheng\ \ Zhang Ankang |
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| Affiliation: | 208 Post Box PC214035 WUXI China E Mail:cri 21ab @ public 1.wx.js.cn |
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| Abstract: | The dielectric reliability of the thin tunnel oxide film has been characterized and monitored by using the constant current stressed Q BD test. Charge trapping in the tunnel oxide is an intrinsic failure mechanism associated with E 2PROM. Q BD testing method is described. High performance E 2PROM devices were fabricated using 8 nm tunnel oxide with Q BD > 5 C/cm 2, excellent W/E endurance over one million cycles was acquired. |
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| Keywords: | dielectric reliability E 2PROM |
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