Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm²/Vs) and high-mobility (7200 cm²/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120 μA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD’s analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80 nm CNFET.