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Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions |
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| Authors: | NA Poklonski NI Gorbachuk VA Filipenia VA Skuratov VP Markevich |
| Affiliation: | a Belarusian State University, pr. Nezavisimosti 4, BY-220030 Minsk, Belarus b Transistor Plant Unitary Enterprise of the SPE “Integral”, ul. Korzhenevskogo 108, BY-220064 Minsk, Belarus c Belmicrosystems Research and Design Company of the SPE “Integral”, ul. Korzhenevskogo 12, BY-220108 Minsk, Belarus d Scientific-Practical Materials Research Center of NAS of Belarus, ul. P. Brovki 19, BY-220072 Minsk, Belarus e Joint Institute for Nuclear Research, ul. Joliot-Curie 6, RU-141980 Dubna, Moscow Region, Russia f Ruhr-Universitaet Bochum, 150 Universitaetsstr., D-44780 Bochum, Germany g The University of Manchester, School of Electrical and Electronic Engineering, Manchester, UK |
| Abstract: | Characteristics of Si p+n diodes with non-uniformly distributed compensating defects, which were introduced by implantation with Xe23+ ions, have been studied. The layer with the maximum concentration of the compensating defects was located in the vicinity of the metallurgical p-n junction. It is found that the presence of the defect layer results in non-monotonic dependences of the imaginary part of impedance (−Z″) and differential conductance (G = −dI/dU) of the implanted diodes on reverse bias voltage U. An equivalent circuit of the irradiated diode is proposed, which allows us to approximate the measured frequency dependences of capacitance and conductance of the irradiated diodes and to determine values of diode barrier capacitance Cpn at different reverse bias voltages. |
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