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Growth mechanism of Ni3Sn4 in a Sn/Ni liquid/solid interfacial reaction
Authors:J Shen  YC Chan  SY Liu
Affiliation:1. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong;2. Department of Mechanical Engineering, University of Hong Kong, Pokflum Road, Hong Kong
Abstract:The chemical interfacial reaction of Ni plates with eutectic Sn–3.5Ag lead-free solder was studied by microstructural observations and mathematical calculations. Compared with the Sn–3.5Ag–0.75Ni/Ni interfacial reaction, based on a simple model of the growth of the liquid/solid chemical compound layer, the growth mechanism of Ni3Sn4 in the Sn–3.5Ag/Ni interfacial reaction is discussed and presented. The growth process of Ni3Sn4 in the Sn/Ni liquid/solid reaction interface involves the net effect of several interrelated phenomena, such as volume diffusion, grain boundary diffusion, grain boundary grooving, grain coarsening, and dissolution into the molten solder. The growth time exponent n and morphology of Ni3Sn4 were found to be dependent on these factors.
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