Mechanical and Tribological Properties of Thin Remote Microwave Plasma CVD a-Si:N:C Films from a Single-Source Precursor |
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| Authors: | Bielinski Dariusz Wrobel Aleksander M Walkiewicz-Pietrzykowska Agnieszka |
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| Affiliation: | (1) Institute of Polymers, Technical University of Lodz, Stefanowskiego 12/16, 90-924 Lodz, Poland;(2) Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Lodz, Poland |
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| Abstract: | Silicon carbonitride (a-Si:N:C) films produced by remote plasma chemical vapor deposition (RP-CVD) were investigated. Tetramethyldisilazane as a single-source precursor and (H2+N2) upstream gas mixture for plasma generation were used. The influence of the upstream gas composition on the structure, density, mechanical and tribological properties of the films deposited on p-type Si (001) wafers (both heated—T
s
=300°C and unheated—T
s
=30°C) are reported. The H2 RP-CVD process was found to result in the formation of outstanding low friction (  0.04) and high hardness (H=27-31 GPa) a-Si:N:C films exhibiting promisingly high H/E values. |
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| Keywords: | RP-CVD thin film silicon carbonitride hardness friction H/E |
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