Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O7−δ superconducting devices on silicon |
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Authors: | G. Huot, L. M chin,D. Bloyet |
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Affiliation: | GREYC (CNRS UMR 6072), ENSICAEN, Université de Caen, 6 Bd du Maréchal Juin, 14050 cedex, Caen, France |
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Abstract: | Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7−δ (YBCO) growth conditions. The effect of annealing on the sheet resistance of unpatterned layers was measured. A Pt-based multilayered metallization for the PMOS devices was proposed and tested for a compatible monolithic integration of semiconducting devices and YBCO sensors on the same silicon substrate. The best results were obtained with a Pt/Ti/Mo-silicide structure showing 0.472 Ω□ interconnect sheet resistivity and 2×10−4 Ω cm2 specific contact resistivity after annealing for 60 min at 700 °C in 0.5 mbar O2 pressure. |
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Keywords: | Pt Mo Metallization Superconducting sensors Monolithic integration |
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