首页 | 本学科首页   官方微博 | 高级检索  
     

TiO2/SiO2薄膜中的相界扩散及晶化行为研究
引用本文:翟继卫,张良莹,姚熹.TiO2/SiO2薄膜中的相界扩散及晶化行为研究[J].无机材料学报,1998,13(1):78-82.
作者姓名:翟继卫  张良莹  姚熹
作者单位:西安交通大学材料研究所!710049,西安,西安交通大学材料研究所!710049,西安,西安交通大学材料研究所!710049,西安
摘    要:本文研究了溶胶一凝胶法制备TiO2/SiO2复合薄膜的晶化行为以及复合薄膜与过渡层的相界扩散采用X-ray衍射分析了50TiO2/50SiO2薄膜中TiO2的析晶特征,研究表明,随热处理温度的升高,薄膜的结构由非晶转变为在SiO2玻璃网络中析出的锐钛矿相,再到锐钛矿和金红石二相共存,最后转变为金红石相,并伴随有磷石英和方石英的析出,且其晶粒尺寸也在逐渐增大.AES分析给出了过渡层的气孔率对复合膜中Ti的扩散能力的影响以及复合膜与过渡层之间碳的分布.SEM及EDS进一步揭示了薄膜表面存在亚微米不均匀区域,在此区域中碳的含量较高.在氧气中,提高热处理温度,可以降低碳的含量.

关 键 词:溶胶-凝胶  薄膜  AES  扩散  晶化
收稿时间:1997-1-7
修稿时间:1997-3-10

Diffusion of Phase Boundary and Crystallization Behaviors for Tio2/SiO2 Composite Films
ZHAI Ji-Wei,ZHANG Liang-Ying,LAO Xi.Diffusion of Phase Boundary and Crystallization Behaviors for Tio2/SiO2 Composite Films[J].Journal of Inorganic Materials,1998,13(1):78-82.
Authors:ZHAI Ji-Wei  ZHANG Liang-Ying  LAO Xi
Affiliation:ElectronicMatericsResearchLaboratory;XianJiaotongUniversityXian710049China
Abstract:The crystallization behaviors of sol-gel TiO2/SiO2 composite films and the phase boundary diffusion of the film alld the buffer la3.er were studied. 50TiO2/50SiO2 films annealed between 500"C and 950'C exhibited crytsallizatioll in the anatase ad rutile phases. The structure of the thin film transformed from amorphous state into anatase, and from anatase into rutile and induced the crystallization of SiO2. For TiOZ/SiO2 film deposited on a dense silica and nano-porous SiO2 surface, the diffusion of Ti call be observed in the nano-porous layer by BES. Between the film and the bllffer layer carboll was also observed by AES. SEAl and EDS revealed the distribution of carboll in the thin film surface. With the increasing heat-treatment temperature in O2 the conent of carbon decreajsed.
Keywords:sol-gel  thin film  AES  diffusion  crystallization  
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《无机材料学报》浏览原始摘要信息
点击此处可从《无机材料学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号