| 导模法生长白宝石单晶中的缺陷观察 |
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| 引用本文： | 马胜利,井晓天,孙巧艳. 导模法生长白宝石单晶中的缺陷观察[J]. 无机材料学报, 1998, 13(1): 91-94 |
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| 作者姓名： | 马胜利 井晓天 孙巧艳 |
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| 作者单位： | 西安理工大学材料科学与工程学院; 西安 710048 |
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| 摘 要： | 本文采用导模法生长出了白宝石（1102）片晶和（0001）棒晶．在此基础上实验观察了白宝石单晶中的位错、亚晶界和小品面等缺陷的形态、数量及分布，讨论了生长条件对它们的影响．结果表明，晶体生长速率和籽晶质量是影响晶体缺陷的两个主要因素．
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| 关 键 词： | 导模法 白宝石单晶 晶体缺陷 生长速率 |
| 收稿时间： | 1996-01-23 |
| 修稿时间： | 1997-03-10 |
Observation on Defects in Sapphire Single Crystal Grown by the EFG Method |
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| MA Sheng-Li,JING Xiao-Tian,SHUN Qiao-Yan. Observation on Defects in Sapphire Single Crystal Grown by the EFG Method[J]. Journal of Inorganic Materials, 1998, 13(1): 91-94 |
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| Authors: | MA Sheng-Li JING Xiao-Tian SHUN Qiao-Yan |
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| Affiliation: | School of Material Science and Engincering; Xi an University of Technology Xi an 710048 China |
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| Abstract: | ? Sapphire (1102) ribbon and (0001) bar were prepared by tile EFG methods and its crystal defects, such as dislocation, subgrain boundary as well as faceting plane were investingated experimentally. The influence of growth process on crystal defects was discussed. It was found that crystal growth rate and the quality of seed crystals were the two critical factors ti.hich affect the formation of defects in sapphire single crystals. |
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| Keywords: | the EFG method sapphire single crystal crystal defect crystal growth rate |
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