(1) Electrical and Computer Engineering, University of California, 95616 Davis, CA;(2) IBM Almaden Research Center, 95120 San Jose, CA
Abstract:
The dielectric properties are reported for nanoporous thin films of poly(methyl silsesquioxane) (MSSQ) for use as an ultralow,
dielectric intermetal insulator. Direct experimental conformation is provided that the films have low dielectric constants
with low loss up to 10 GHz. Low-frequency measurements are also reported.