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Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure
Authors:M. V. Yakushev  V. S. Varavin  V. V. Vasil’ev  S. A. Dvoretsky  A. V. Predein  I. V. Sabinina  Yu. G. Sidorov  A. V. Sorochkin  A. O. Suslyakov
Affiliation:1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:It is demonstrated for the first time that high-performance scanning infrared (IR) focal plane assemblies of the 288 × 4 format for long-wavelength (8–12 μm) IR spectral range can be created based on a Cd x Hg1 − x Te/Si(310) heterostructure.
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