1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:
It is demonstrated for the first time that high-performance scanning infrared (IR) focal plane assemblies of the 288 × 4 format for long-wavelength (8–12 μm) IR spectral range can be created based on a CdxHg1 − xTe/Si(310) heterostructure.