Effect of Orientation on the Ferroelectric Behavior of (Pb,Sr)TiO3 Thin Films |
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| Authors: | Jiwei Zhai Xi Yao Zhengkui Xu Haydn Chen |
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| Affiliation: | Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China; Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong |
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| Abstract: | Pb0.6Sr0.4TiO3 (PST) ferroelectric thin films were prepared on two different substrates by sol–gel methods. Films derived on the LaNiO(LNO)/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The PST thin films grown on the LNO/Pt/Ti/SiO2/Si(100) substrate showed a non-uniform rounded grain size distribution and have a larger polarization and lower coercive field E c. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates has been studied, with a focus on the change of dielectric constant versus direct current (DC) bias field. The dielectric and ferroelectric properties of the Pb0.6Sr0.4TiO3 thin films deposition on two kinds of substrates were investigated as a function of temperature, frequency and DC bias field. |
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