| GaN基半导体激光器发展动态研究 |
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| 引用本文： | 李栓庆.GaN基半导体激光器发展动态研究[J].微纳电子技术,2000(3). |
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| 作者姓名： | 李栓庆 |
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| 作者单位： | 电子十三所!石家庄050051 |
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| 摘 要： | 简单介绍了材料特性及器件应用 ,着重介绍了氮化镓基半导体激光器的研究进展及其关键技术。
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| 关 键 词： | 氮化镓 碳化硅 蓝宝石 激光二极管 欧姆接触 |
Development Tendency of GaN Based Laser Diodes |
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| Li Shuanqing.Development Tendency of GaN Based Laser Diodes[J].Micronanoelectronic Technology,2000(3). |
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| Authors: | Li Shuanqing |
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| Abstract: | The material charecteristics and the application of GaN based laser diodes are introduced briefly.The development tendency of GaN based semiconductor laser diodes and their key techniques are presented emphatically. |
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| Keywords: | GaN SiC Sapphire Laser diode Ohmic contact |
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