An anisotype GaAs/InxGa1-xAs heterojunctionfield-effect transistor for digital logic applications |
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| Authors: | Lin C.L. Fernandez J.M. Wieder H.H. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA; |
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| Abstract: | An anisotype heterojunction field-effect transistor (A-HJFET) for GaAs digital integrated circuit applications is proposed. A thin, highly doped, strained InxGa1-xAs (x⩽0.2) n-channel is employed for improved transconductance while a p+-GaAs cap is used to enhance the dynamic gate voltage range of the device. Prototype devices with 5-μm gate lengths show a maximum transconductance of 80 mS/mm at Vds=2 V and a forward gate bias voltage of up to +2 V without significant leakage current |
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