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A study of the crystallization kinetics of Ge-Te amorphous systems
Affiliation:1. Department of Physics, Manonmaniam Sundaranar University, Tirunelveli 627012, Tamil Nadu, India;2. Department of Physics, UAE University, P.O. Box 17551, Al-Ain, UAE;3. Department of Physics, Indian Institute of Technology Madras, Chennai 600036, Tamil Nadu, India;4. Multifunctional Materials & Devices Lab, Anusandhan Kendra-II, School of Electrical and Electronics Engineering, SASTRA University, Thanjavur, India;5. Department of Physics, Alagappa Chettiar College of Engineering & Technology, Karaikudi, Tamil Nadu, India
Abstract:The glass-forming ability of binary GexTe100-x (x=15, 20, 30) alloys was investigated. The crystallization mechanism of these amorphous bulks was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential scanning calo-rimetry (DSC). The temperature of glass transition, the temperature of crystallization, the activation energy for glass transition and crystallization, and the order of the crystallization mechanism were calculated from the different heating-rates.
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