Neutron-induced noise in junction field-effect transistors |
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Abstract: | A modified depletion-layer generation-recombination (g-r) noise theory is given for defects with energy levels away from the middle of the band gap. Measurements are presented on JFET's irradiated with neutrons. The g-r noise spectra of these indicate that five distinct defects are introduced; the results are explained with the modified theory. |
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