Buried selectively oxidized AlGaAs structures grown on nonplanar substrates |
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| Authors: | P.C. Ku J.A. Hernandez C.J. Chang-Hasnain |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA; |
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| Abstract: | We demonstrate a novel buried oxide-grating structure formed by selectively oxidized Al/sub x/Ga/sub 1-x/As grown on nonplanar substrates using low-pressure metal-organic chemical vapor deposition (MOCVD) for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor-distributed-feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum. |
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