| SiGe基区异质结晶体管电流和频率特性的解析模型 |
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| 引用本文： | 刘融 钱文生. SiGe基区异质结晶体管电流和频率特性的解析模型[J]. 固体电子学研究与进展, 1998, 18(4): 384-391 |
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| 作者姓名： | 刘融 钱文生 |
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| 作者单位： | 东南大学微电子中心!南京，210096，东南大学微电子中心!南京，210096，东南大学微电子中心!南京，210096 |
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| 摘 要： | 给出了一个适用于分析SiGe基区异质结晶体管电流和频率特性的解析模型,并利用该模型分析了基区掺杂和组分均级变的SiGe异质结晶体管的电流增益、截止频率、最高振荡频率。模型中考虑了由于基区重掺杂和Ge的掺入引起的禁带窄变效应、载流子速度饱和效应。解析模型的计算结果与实验的对比证实了本模型可适用于器件的优化设计和电路的模拟。
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| 关 键 词： | 异质结晶体管 电流增益 频率特性 解析模型 |
Analytical Model of Current and Frequency Performance in SiGe-base Heterojunction Bipolar Transistors |
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| Liu Rong, Qian Wensheng, Wei Tongli. Analytical Model of Current and Frequency Performance in SiGe-base Heterojunction Bipolar Transistors[J]. Research & Progress of Solid State Electronics, 1998, 18(4): 384-391 |
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| Authors: | Liu Rong Qian Wensheng Wei Tongli |
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| Abstract: | An analytical model of current and frequency performance in SiGebase heterojunction bipolar transistors has been presented. The collector current,cut-frequency, maximum oscillation frequency are calculated from this model. The model accounts for the carrier velocity saturation and the influence of the built-in electric fields due to Ge concentration and doping gradients- Comparisons between the model prediction and the experimental data for the DC current/voltage characteristics and frequency performance in SiGe HBT are included to demonstrate the model utility and accuracy. |
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| Keywords: | Heterojunction Bipolar Transistors Current Gain Frequency Performance Analytical Model |
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