Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer |
| |
Authors: | Z. Zhang R.E. Stahlbush P. Pirouz T.S. Sudarshan |
| |
Affiliation: | (1) Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA;(2) Naval Research laboratory, Washington, DC 20374, USA;(3) Department of Materials␣Science and Engineering, Case Western Reserve University, Cleveland, OH 22106, USA |
| |
Abstract: | Dislocation “half-loop arrays” (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular to the off-cut direction. These results indicate that the dislocation half-loops in an array are not formed simultaneously, but the array extends by generation of new half-loops during growth. It is also demonstrated that the HLAs can be artificially induced by creating strain in the material, followed by annealing. |
| |
Keywords: | Dislocation silicon carbide (SiC) half-loop epitaxy chemical vapor deposition epitaxial growth |
本文献已被 SpringerLink 等数据库收录! |
|