The effect of γ-sterilization on the pH-ChemFET behaviour |
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Authors: | I. P. G. |
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Affiliation: | aLAAS-CNRS, University of Toulouse, 7 avenue du colonel Roche, 31077 Toulouse Cedex 4, France |
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Abstract: | One of the key requirements biomedical and pharmaceutical sensors have to satisfy is their ability to withstand sterilization cycle. In this paper, the influence of γ-sterilization on the electrical and electrochemical characterizations of pH-sensitive chemical field effect transistors (pH-ChemFET) is examined before and after γ-irradiation. It is shown that γ-irradiation is suitable for pH-ChemFETs sterilization in the field of in-vitro analysis and more precisely for single-use bioreactors. |
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Keywords: | MOS irradiation γ -Sterilization pH-ChemFET sensor |
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