| Hg1-xMnxTe晶片电学参数的测量及分析 |
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| 引用本文： | 王泽温,介万奇,李宇杰,谷智.Hg1-xMnxTe晶片电学参数的测量及分析[J].功能材料,2006,37(8):1232-1234,1238. |
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| 作者姓名： | 王泽温 介万奇 李宇杰 谷智 |
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| 作者单位： | 西北工业大学,材料科学与工程学院,陕西,西安,710072 |
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| 摘 要： | 采用范德堡法分别在77K和室温下对多个Hg1-xMnxTe晶片的电学性能进行了测量,发现部分晶片在77K下的导电类型为p型,而在室温下却为n型.通过理论分析对此现象进行了解释.分析表明:Hg1-xMnxTe晶片中电子迁移率与空穴迁移率的比值较大和Hg1-xMnxTe的禁带较窄是造成晶片导电类型转变的主要原因.对所测其它电学参数的理论分析表明范德堡法不适合用于Hg1-xMnxTe晶片室温时的载流子浓度和迁移率的测量,但仍可用其对晶片室温时的电阻率和霍尔系数进行测量.
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| 关 键 词： | Hg1-xMnxTe 范德堡法 导电类型 霍尔系数 |
| 文章编号： | 1001-9731（2006）08-1232-03 |
| 收稿时间： | 2005-10-25 |
| 修稿时间： | 2005-10-252006-02-20 |
Measurement and analysis of electronic properties of Hg1-xMnxTe wafers |
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| WANG Ze-wen,JIE Wan-qi,LI Yu-jie,GU Zhi.Measurement and analysis of electronic properties of Hg1-xMnxTe wafers[J].Journal of Functional Materials,2006,37(8):1232-1234,1238. |
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| Authors: | WANG Ze-wen JIE Wan-qi LI Yu-jie GU Zhi |
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| Abstract: | Electronic properties of several Hg1-x Mnx Te wafers are characterized by Van Der Pauw method at 77K and room temperature respectively. It is found that the conductivity type of a part of Hg1-x MnxTe wafers change from p type at 77K to n type at room temperature. The reasons are explained through theoretical analysis. The analysis shows that high ratio of electron to hole drift mobility and narrow forbidden band of Hg1-x MnxTe play key roles. Theoretical analysis of other electronic properties of Hg1-x MnxTe wafers shows that Van Der Pauw method does not suit to test carrier concentration and drift mobility of Hg1-xMnxTe wafers at room temperature, but it can be used to test resistivity and Hall coefficient. |
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| Keywords: | Hg1-xMnxTe Van Der Pauw method conductivity type Hall coefficient |
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