14 nm FinFET器件单粒子瞬态特性研究

为评估鳍式场效应晶体管（FinFET）的本征抗辐射能力，本文通过三维工艺计算机辅助设计（TCAD）仿真研究了14 nm FinFET工艺的单粒子瞬态（SET）特性。研究结果表明，在不同的线性能量传输（LET）值及不同的入射位置下，FinFET器件具有不同的单粒子敏感性。SET脉冲宽度随LET值的增大而展宽。此外，SET特性与粒子轰击位置的关系呈现出复杂性。对于低LET值（LET≤1 MeV·cm2/mg），SET特性与重离子的入射位置具有很强的依赖性；对于高LET值（LET＞10 MeV·cm2/mg），由于加强了衬底的电荷收集，SET特性与粒子轰击位置的依赖性减弱。

Characterization of Single Event Transient in 14 nm FinFET Technology

In order to evaluate the intrinsic radiation hardness of the fin field effect transistor (FinFET) device, the characteristics of single event transient (SET) were studied by 3D technology computer aided design (TCAD) simulations in the 14 nm FinFET technology. The results show that the single event sensitivity varies according to LET values and incident positions. The width of SET pulse broadens with the increase of LET values. Besides, the response of SET has a complicated relationship with the strike location. For low LET values (LET≤1 MeV·cm2/mg), the SET response has a strong dependency on the place where it is struck by heavy ions. For high LET values (LET>10 MeV·cm2/mg), the strike location dependency of the SET response diminishes due to the enhanced substrate charge collection.