首页 | 本学科首页   官方微博 | 高级检索  
     

制备过程中FeSiB非晶带材自由面氧化对磁性能的影响
引用本文:李百松,李志刚,宋恩猛. 制备过程中FeSiB非晶带材自由面氧化对磁性能的影响[J]. 钢铁研究学报, 2021, 33(9): 960-965. DOI: DOI:10.13228/j.boyuan.issn1001-0963.20200188
作者姓名:李百松  李志刚  宋恩猛
作者单位:中国钢研科技集团有限公司安泰科技股份有限公司, 北京 100081
摘    要:摘要:利用X射线衍射(XRD)及X射线光电子谱(XPS)对采用平面流铸法制备的Fe78Si9B13非晶带材进行了分析,研究结果表明:当只有熔潭前端被CO保护时,所制备出的Fe78Si9B13非晶带材自由面会出现厚约10nm的Fe2O3氧化层;经XRD分析,Fe2O3氧化层的产生会使得带材自由面在2θ为661°处出现Fe(Si)固溶体晶化相,从而恶化带材磁性能。在非晶带材的制备过程中,采用CO气体对熔潭前端与后端同时进行保护,可有效避免非晶带材自由面的氧化,改善带材磁性能。

关 键 词:FeSiB非晶带材  熔潭保护  磁性能  X射线光电子谱

Effect of free surface oxidation on magnetic properties of FeSiB amorphous ribbon during casting
LI Baisong,LI Zhigang,SONG Enmeng. Effect of free surface oxidation on magnetic properties of FeSiB amorphous ribbon during casting[J]. Journal of Iron and Steel Research, 2021, 33(9): 960-965. DOI: DOI:10.13228/j.boyuan.issn1001-0963.20200188
Authors:LI Baisong  LI Zhigang  SONG Enmeng
Affiliation:Advanced Technology and Materials Co., Ltd., China Iron and Steel Research Institute Group,Beijing 100081, China
Abstract:X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were taken to analyze the Fe78Si9B13 amorphous ribbon, which is made by planar flow casting method. The results show that the Fe2O3 oxide layer with thickness of about 10 nm will be generated in the free-surface of Fe78B9B13 amorphous ribbon when the up-stream meniscus of liquid puddle is protected by CO. Meanwhile, Fe(Si) solid solution crystalline phase occurs at 2θ of 66.1° in the free-surface ascribing the existence of the above Fe2O3 oxide layer, leading to the deterioration of magnetic properties. By protecting the liquid puddle in both up-stream and down stream meniscus in the casting process, the free-surface oxidation can be effectively prevented, which will improve the magnetic properties.
Keywords:Key words:FeSiB amorphous ribbon  puddle protection   magnetic property   X-ray photoelectron spectroscopy  
本文献已被 万方数据 等数据库收录!
点击此处可从《钢铁研究学报》浏览原始摘要信息
点击此处可从《钢铁研究学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号