130 nm SOI D触发器链空间静电放电效应和单粒子效应对比试验研究

空间静电放电效应（SESD）和单粒子效应（SEE）是卫星设备异常的两个重要原因，但难以精确判断航天应用中产生的故障是由何种效应所导致。以130 nm SOI工艺D触发器（D flip flop）链为试验对象，利用静电放电发生器和脉冲激光试验装置，通过改变辐射源能量、测试模式、拓扑结构以及抗辐射加固结构等试验变量，试验研究SESD和SEE引起软错误的异同规律特征，其试验结果可为故障甄别及防护设计提供支撑。

Comparative Experimental Study on Space Electrostatic Discharge Effect and Single Event Effect of 130 nm SOI D Flip-flop Chains

Space electrostatic discharge effect (SESD) and single event effect (SEE) are two significant causes of anomalies in satellite devices. However, there are difficulties in precisely distinguishing which effect causes the specific fault in space applications. In the present study work, D flip flop chains fabricated with 130 nm SOI process technology were adopted as the device under test (DUT). By utilizing an ESD generator and a pulsed laser experimental facility, the similarities and differences of soft errors caused by SESD and SEE were explored, with experimental variables such as the radiation source energy, test mode, topological structure, and radiation hardened structure of the device. The test results of the present study can provide an experimental basis for anomaly identification and protection design.