Ag-In共晶键合在硅-铜封接中的应用

目前在真空领域对于硅-铜封接的常用方式为Torr-Seal胶封接和玻璃粉高温烧结方式,但因其高放气率和玻璃粉污染等问题在超高真空受到限制,因此迫切需要一种气密性好、放气率低、工艺温和的封接方法.本文提出了一种基于Ag-In合金的硅-铜的新封接方法,即利用Ag-In合金中间层将硅片封接到无氧铜板支撑件上,并通过法兰连接到...

Silicon-Copper Sealing Based on Eutectic Bonding with Ag-In Alloy

The Torr-Seal gluing method and glass frit sintering method commonly used in silicon-copper sealing is difficult to apply to ultra-high vacuum on account of its high outgassing rate and glass frit pollution for the file of vacuum. Therefore,a sealing method with excellent hermeticity and low outgassing rate is urgently needed. In this paper,a new sealing method based on Ag-In alloy for the silicon-based standard conductive element is proposed;that is,the silicon wafer is sealed to an oxygen-free copper plate by a micro-nano manufacturing process with an Ag-In alloy layer,and then connected to a vacuum test system by the flange. The structural design of oxygen-free copper plate support was optimized,and the best buffering effect of the alloy layer was verified by the ANSYS workbench. The best process parameters were found through experiments,and the background leakage rate of the sealing assembly was measured by a helium mass spectrometer. The measurement results show that the minimum background leakage rate is 7.49×10^-12 Pa·m³·s^-1 at the atmospheric upstream pressure.