| Synthesis of Co-silicides and fabrication of microwave power device using MEVVA source implantation |
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| 作者姓名： | 张通和 吴瑜光 钱卫东 刘要东 张旭 |
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| 作者单位： | ZHANG Tonghe WU Yuguang，QIAN WeidongLIU Yaodong & ZHANG XuKey Laboratory for Radiation Beam Technology and Material Modification，Institute of Low Energy Nuclear Physics，Beijing Normal University，Beijing Radiation Center，Beijing |
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| 基金项目： | This work was supported by the National Natural Science Foundation of China (Grant No, 50141022) and Committee of 863 High Science and Technology (2001AA38020) |
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| 摘 要： | Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125μA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50μA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the t
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Synthesis of Co-silicides and fabrication of microwave power device using MEVVA source implantation |
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| Zhang Tonghe , Wu Yuguang , Qian Weidong , Liu Yaodong and Zhang Xu.Synthesis of Co-silicides and fabrication of microwave power device using MEVVA source implantation[J].Science in China(Technological Sciences),2002,45(4):348-352. |
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| Authors: | Zhang Tonghe Wu Yuguang Qian Weidong Liu Yaodong and Zhang Xu |
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| Affiliation: | Key Laboratory for Radiation Beam Technology and Material Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China |
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| Abstract: | Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 mA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50 mA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the transistors decrease markedly; the microwave property has been improved obviously. |
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| Keywords: | Co silicides ion implantation into silicon high ion flux rapid thermal annealing |
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