|
|||||
|
|
| 集成电路互连线电迁移测试方法与评价 | |
| 引用本文： | 吴丰顺,王磊,吴懿平,张金松,姜幼卿. 集成电路互连线电迁移测试方法与评价[J]. 微电子学, 2004, 34(5): 489-492 |
| 作者姓名： | 吴丰顺 王磊 吴懿平 张金松 姜幼卿 |
| 作者单位： | 1. 华中科技大学,塑性成形模拟及模具技术国家实验室,湖北,武汉,430074;华中科技大学,微系统研究中心,湖北,武汉,430074 2. 华中科技大学,微系统研究中心,湖北,武汉,430074 3. 华中科技大学,塑性成形模拟及模具技术国家实验室,湖北,武汉,430074 |
| 基金项目： | 863项目"倒装芯片技术在MEMS中的应用"(2002AA404110),中港基金项目"倒装芯片无铅互连凸点电迁移研究"(60318002) |
| 摘 要： | 介绍了研究集成电路互连线电迁移的两种方法：加速寿命试验和移动速度试验。对加速寿命试验进行了分析和评价。分析表明,加速寿命试验方法存在高应力条件与正常工作条件下互连线电迁移中金属离子扩散机制不同、BLACK方程的使用范围有限、受试件特殊结构影响和电阻温度系数TCR随温度变化等问题。介绍了一种改进方法。详细介绍了移动速度试验,指出了其在互连线电迁移研究中的应用。 |
| 关 键 词： | 集成电路 互连线 电迁移 加速寿命试验 移动速度试验 |
| 文章编号： | 1004-3365(2004)05-0489-04 |
Test Methods for Electromigration in IC Interconnects and Their Evaluations |
|
| WU Feng-shun. Test Methods for Electromigration in IC Interconnects and Their Evaluations[J]. Microelectronics, 2004, 34(5): 489-492 | |
| Authors: | WU Feng-shun |
| Affiliation: | WU Feng-shun~ |
| Abstract: | Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described. First, the accelerated lifetime test is analysed and evaluated. It has been shown that there exist some pitfalls in the accelerated lifetime test, such as different atom diffusion mechanism under high stress condition and for normal operations, limited applications of BLACK equation, effects of special test structure on test results and variation of temperature coefficient of resistors(TCR). An improved method is presented. And finally, the drift velocity test is dealt with in detail, and its application to the study of electromigration in IC interconnects is described. |
| Keywords: | Integrated circuit Interconnect Electromigration Accelerated lifetime test Drift velocity test |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |