Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells

A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.