| 对DC-PCVD装置沉积Si_3N_4薄膜机理的研究 |
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| 引用本文： | 周海,吴大兴.对DC-PCVD装置沉积Si_3N_4薄膜机理的研究[J].北京石油化工学院学报,1997(1). |
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| 作者姓名： | 周海 吴大兴 |
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| 作者单位： | 北京石油化工学院机械工程系，西南交通大学材料系 北京 102600，成都 610031 |
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| 摘 要： | 使用直流等离子体化学气相沉积(DC-PCVD)装置,控制合适的工艺参数可对置于其阴阳极上的试样沉积出以Si_3N_4为主要成分的薄膜,本文提出了在阴极以及阳极上都能使试样表面得到这种薄膜的机制模型。正电荷的积累和自由电子的质扩散对于阴极试样表面薄膜的形成起着重要的作用。阳极试样表面薄膜的形成则与电子的积累和正离子的扩散及重力对粒子的作用有关。
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| 关 键 词： | 直流等离子体化学气相沉积 Si_3N_4薄膜 模型 |
The Model of Depositing Si_3N_4 Film on Cathod and Anode of DC-PCVD |
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| Zhou Hai.The Model of Depositing Si_3N_4 Film on Cathod and Anode of DC-PCVD[J].Journal of Beijing Institute of Petro-Chemical Technology,1997(1). |
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| Authors: | Zhou Hai |
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| Abstract: | The Si3N4 films can be deposited on the samples on the cathod and anode by using DC-PCVD (direct current plasma chemical vapor deposition) device and controlling the processing parameters. This paper suggests a model that the thin films can be obtained on samples which are put on the cathod and anode. The accumulation of positive charges and the diffusion of the free electrons play on important role in the formation of the surface films on the samples on the cathed. The formation of surface films on the samples on the anode has is related with the accumulation of the free electrons , the diffusion of cations and the action of gravity on particles. |
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| Keywords: | direct current plasma chemical vapor deposition Si_3N_4 thin film model |
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