| 一种可切换的双频段CMOS低噪声放大器 |
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| 引用本文： | 武振宇,马成炎,叶甜春,庄海孝. 一种可切换的双频段CMOS低噪声放大器[J]. 微电子学, 2010, 40(2) |
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| 作者姓名： | 武振宇 马成炎 叶甜春 庄海孝 |
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| 作者单位： | 1. 中国科学院,微电子研究所,北京,100029
2. 杭州中科微电子有限公司,杭州,310053 |
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| 摘 要： | 基于0.18μm RF CMOS工艺,设计了一种可切换的双频段CMOS低噪声放大器,其输入输出均匹配到50Ω。加入封装、ESD电路和PAD模型,采用Cadence Spectre RF进行仿真。结果显示,在1.8 V工作电压下,1.575 GHz输入时,LNA的噪声系数、功率增益和偏置电流分别为0.9 dB、18.2 dB和5.7 mA;1.2 GHz输入时,LNA的噪声系数、功率增益和偏置电流分别为0.8dB、16.8 dB和5.3 mA。
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| 关 键 词： | CMOS 低噪声放大器 双频段 |
A Switchable Dual-Band CMOS LNA |
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| WU Zhenyu,MA Chengyan,YE Tianchun,ZHUANG Haixiao. A Switchable Dual-Band CMOS LNA[J]. Microelectronics, 2010, 40(2) |
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| Authors: | WU Zhenyu MA Chengyan YE Tianchun ZHUANG Haixiao |
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| Affiliation: | 1.Institute of Microelectronics/a>;The Chinese Academy of Sciences/a>;Beijing 100029/a>;P.R.China/a>;2.Hangzhou Zhongke Microelectronics Co.Ltd./a>;Hangzhou 310053/a>;P.R.China |
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| Abstract: | Based on 0.18 μm RF CMOS process, a switchable dual-band CMOS LNA with 50 Ω input/output matching was presented. With model parameters of package, ESD circuit and PAD included, the LNA was simulated with Cadence Spectre RF at 1.8 V supply voltage. Results showed that the LNA had a noise figure of 0.9 dB and 0.83 dB, a power gain of 18.2 dB and 16.8 dB, and a bias current of 5.7 mA and 5.3 mA, at 1.575 GHz and 1.2 GHz, respectively. |
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| Keywords: | CMOS LNA Dual-band |
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